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| PartNumber | BFP 193 E6327 | BFP193E6327 PB-FREE | BFP193E6327/RC |
| Description | RF Bipolar Transistors NPN Silicon RF TRANSISTOR | ||
| Manufacturer | Infineon | - | - |
| Product Category | RF Bipolar Transistors | - | - |
| RoHS | Y | - | - |
| Series | BFP193 | - | - |
| Transistor Type | Bipolar | - | - |
| Technology | Si | - | - |
| Transistor Polarity | NPN | - | - |
| Collector Emitter Voltage VCEO Max | 12 V | - | - |
| Emitter Base Voltage VEBO | 2 V | - | - |
| Continuous Collector Current | 0.08 A | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Configuration | Single | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-143-4 | - | - |
| Packaging | Reel | - | - |
| Collector Base Voltage VCBO | 20 V | - | - |
| DC Current Gain hFE Max | 70 at 30 mA at 8 V | - | - |
| Height | 1 mm | - | - |
| Length | 2.9 mm | - | - |
| Operating Frequency | 8 GHz | - | - |
| Type | RF Bipolar Small Signal | - | - |
| Width | 1.3 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Gain Bandwidth Product fT | 8000 MHz | - | - |
| Maximum DC Collector Current | 0.08 A | - | - |
| Pd Power Dissipation | 580 mW | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | BFP193E6327HTSA1 BFP193E6327XT SP000011024 | - | - |