BFP 720FESD H6327 vs BFP720FESDH6327XTSA1 vs BFP 720F E6327

PartNumber	BFP 720FESD H6327	BFP720FESDH6327XTSA1	BFP 720F E6327
Description	RF Bipolar Transistors RF BIP TRANSISTORS	RF Bipolar Transistors RF BIP TRANSISTORS	RF Bipolar Transistors RF BIP TRANSISTORS
Manufacturer	Infineon	Infineon	Infineon
Product Category	RF Bipolar Transistors	RF Bipolar Transistors	RF Bipolar Transistors
RoHS	Y	-	Y
Series	BFP720	-	-
Transistor Type	Bipolar	-	Bipolar
Technology	SiGe	Si	SiGe
Collector Emitter Voltage VCEO Max	4.2 V	-	4 V
Continuous Collector Current	30 mA	-	25 mA
Minimum Operating Temperature	- 55 C	-	- 55 C
Maximum Operating Temperature	+ 150 C	-	+ 150 C
Mounting Style	SMD/SMT	-	SMD/SMT
Package / Case	TSFP-4-1	TSFP-4	-
Packaging	Reel	Reel	Reel
Collector Base Voltage VCBO	4.9 V	-	13 V
DC Current Gain hFE Max	400	-	400
Operating Frequency	43 GHz	-	45 GHz
Type	RF Silicon Germanium	-	RF Silicon Germanium
Brand	Infineon Technologies	Infineon Technologies	Infineon Technologies
Pd Power Dissipation	100 mW	-	100 mW
Product Type	RF Bipolar Transistors	RF Bipolar Transistors	RF Bipolar Transistors
Factory Pack Quantity	3000	-	3000
Subcategory	Transistors	Transistors	Transistors
Part # Aliases	BFP720FESDH6327XTSA1 BFP72FESDH6327XT SP000853562	720FESD BFP BFP72FESDH6327XT H6327 SP000853562	BFP720FE6327XT
Emitter Base Voltage VEBO	-	-	1.2 V
Height	-	-	0.55 mm
Length	-	-	1.4 mm
Width	-	-	0.8 mm