PartNumber | BFP 740ESD H6327 | BFP740ESDH6327XTSA1 | BFP 740ESD |
Description | RF Bipolar Transistors RF BIP TRANSISTORS | RF Bipolar Transistors RF BIP TRANSISTORS | |
Manufacturer | Infineon | Infineon | Infineon Technologies |
Product Category | RF Bipolar Transistors | RF Bipolar Transistors | RF Transistors (BJT) |
RoHS | Y | - | - |
Series | BFP740 | BFP740 | BFP740 |
Transistor Type | Bipolar | - | Bipolar |
Technology | SiGe | Si | SiGe |
Collector Emitter Voltage VCEO Max | 4.2 V | - | - |
Continuous Collector Current | 45 mA | - | 45 mA |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | SOT343-3 | SOT-343-4 | - |
Packaging | Reel | Reel | Reel |
DC Current Gain hFE Max | 400 | - | - |
Operating Frequency | 45 GHz | - | 45 GHz |
Type | RF Silicon Germanium | - | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Pd Power Dissipation | 160 mW | - | - |
Product Type | RF Bipolar Transistors | RF Bipolar Transistors | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | Transistors | Transistors | - |
Part # Aliases | BFP740ESDH6327XTSA1 BFP74ESDH6327XT SP000785486 | 740ESD BFP BFP74ESDH6327XT H6327 SP000785486 | - |
Unit Weight | 0.000212 oz | - | - |
Part Aliases | - | - | BFP740ESDH6327XT BFP740ESDH6327XTSA1 SP000785486 |
Package Case | - | - | SOT343-3 |
Pd Power Dissipation | - | - | 160 mW |
Collector Emitter Voltage VCEO Max | - | - | 4.2 V |