BFR380L3E6327XTMA1 vs BFR 380L3 E6327 vs BFR380L3E6327XTMA1-CUT TAPE

PartNumber	BFR380L3E6327XTMA1	BFR 380L3 E6327	BFR380L3E6327XTMA1-CUT TAPE
Description	RF Bipolar Transistors NPN Silicon RF TRANSISTOR	RF Bipolar Transistors NPN Silicon RF TRANSISTOR
Manufacturer	Infineon	Infineon	-
Product Category	RF Bipolar Transistors	RF Bipolar Transistors	-
RoHS	Y	Y	-
Series	BFR380L3	BFR380L3	-
Transistor Type	Bipolar	Bipolar	-
Technology	Si	Si	-
Transistor Polarity	NPN	NPN	-
DC Collector/Base Gain hfe Min	90	90	-
Collector Emitter Voltage VCEO Max	6 V	6 V	-
Emitter Base Voltage VEBO	2 V	2 V	-
Continuous Collector Current	80 mA	80 mA	-
Minimum Operating Temperature	- 55 C	- 65 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Configuration	Single	Single	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	TSLP-3	TSLP	-
Packaging	Reel	Reel	-
Operating Frequency	14 GHz	14 GHz	-
Brand	Infineon Technologies	Infineon Technologies	-
Maximum DC Collector Current	80 mA	0.08 A	-
Pd Power Dissipation	380 mW	380 mW	-
Product Type	RF Bipolar Transistors	RF Bipolar Transistors	-
Factory Pack Quantity	15000	15000	-
Subcategory	Transistors	Transistors	-
Part # Aliases	380L3 BFR BFR38L3E6327XT E6327 SP000013562	BFR380L3E6327XTMA1 BFR38L3E6327XT SP000013562	-
Collector Base Voltage VCBO	-	15 V	-
DC Current Gain hFE Max	-	90 at 40 mA at 3 V	-
Height	-	0.45 mm	-
Length	-	1 mm	-
Type	-	RF Bipolar Small Signal	-
Width	-	0.6 mm	-
Unit Weight	-	0.000019 oz	-