PartNumber | BFS483H6327XTSA1 | BFS 483 H6327 | BFS483H6327XTSA1-CUT TAPE |
Description | RF Bipolar Transistors RF BIP TRANSISTOR | RF Bipolar Transistors RF BIP TRANSISTOR | |
Manufacturer | Infineon | Infineon | - |
Product Category | RF Bipolar Transistors | RF Bipolar Transistors | - |
RoHS | Y | Y | - |
Series | BFS483 | BFS483 | - |
Technology | Si | Si | - |
Package / Case | SOT-363-6 | SOT-363 | - |
Packaging | Reel | Reel | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Product Type | RF Bipolar Transistors | RF Bipolar Transistors | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | Transistors | Transistors | - |
Part # Aliases | 483 BFS BFS483H6327XT H6327 SP000750464 | BFS483H6327XT BFS483H6327XTSA1 SP000750464 | - |
Unit Weight | 0.000265 oz | 0.000212 oz | - |
Transistor Type | - | Bipolar | - |
Transistor Polarity | - | NPN | - |
DC Collector/Base Gain hfe Min | - | 70 | - |
Collector Emitter Voltage VCEO Max | - | 12 V | - |
Emitter Base Voltage VEBO | - | 2 V | - |
Continuous Collector Current | - | 65 mA | - |
Minimum Operating Temperature | - | - 65 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Mounting Style | - | SMD/SMT | - |
Operating Frequency | - | 8 GHz | - |
Type | - | RF Bipolar Small Signal | - |
Maximum DC Collector Current | - | 65 mA | - |
Pd Power Dissipation | - | 450 mW | - |