PartNumber | BGA7H1N6E6327XTSA1 | BGA7H1N6 E6327 | BGA7H1N6E6327XTSA1INFINE |
Description | RF Amplifier RF SILICON MMIC | ||
Manufacturer | Infineon | - | - |
Product Category | RF Amplifier | - | - |
RoHS | Y | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TSNP-6 | - | - |
Type | LNA for LTE | - | - |
Technology | SiGe | - | - |
Operating Frequency | 2300 MHz to 2690 MHz | - | - |
P1dB Compression Point | - 1 dBm | - | - |
Gain | 12.5 dB | - | - |
Operating Supply Voltage | 3.3 V | - | - |
NF Noise Figure | 0.6 dB | - | - |
OIP3 Third Order Intercept | 6 dBm | - | - |
Operating Supply Current | 4.7 mA | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 85 C | - | - |
Packaging | Reel | - | - |
Brand | Infineon Technologies | - | - |
Input Return Loss | 11 dB | - | - |
Isolation dB | 21 dB | - | - |
Pd Power Dissipation | 60 mW | - | - |
Product Type | RF Amplifier | - | - |
Factory Pack Quantity | 15000 | - | - |
Subcategory | Wireless & RF Integrated Circuits | - | - |
Part # Aliases | 7H1N6 BGA E6327 SP001109130 | - | - |
Unit Weight | 0.000032 oz | - | - |