PartNumber | BLV20 | BLV2-200 | BLV2024 |
Description | RF Bipolar Transistors RF Transistor | ||
Manufacturer | Advanced Semiconductor, Inc. | - | - |
Product Category | RF Bipolar Transistors | - | - |
RoHS | Y | - | - |
Transistor Type | Bipolar Power | - | - |
Technology | Si | - | - |
Transistor Polarity | NPN | - | - |
DC Collector/Base Gain hfe Min | 10 | - | - |
Collector Emitter Voltage VCEO Max | 35 V | - | - |
Emitter Base Voltage VEBO | 4 V | - | - |
Continuous Collector Current | 1 A | - | - |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 200 C | - | - |
Mounting Style | Screw Mount | - | - |
Package / Case | SOT-123 | - | - |
Packaging | Tray | - | - |
Operating Frequency | 175 MHz | - | - |
Type | RF Bipolar Power | - | - |
Brand | Advanced Semiconductor, Inc. | - | - |
Maximum DC Collector Current | 2.5 A | - | - |
Pd Power Dissipation | 20 W | - | - |
Product Type | RF Bipolar Transistors | - | - |
Subcategory | Transistors | - | - |