BPX 38 vs BPX 38-2/3 vs BPX38-2

 
PartNumberBPX 38BPX 38-2/3BPX38-2
DescriptionPhototransistors PHOTODIODEOptical Sensors Phototransistors PHOTODIODE
ManufacturerOsram Opto SemiconductorOSRAM Opto Semiconductors Inc.-
Product CategoryPhototransistorsOptical Sensors - Phototransistors-
RoHSY--
ProductPhototransistorsPhototransistors-
Package / CaseTO-18--
Mounting StyleThrough HoleThrough Hole-
Peak Wavelength880 nm--
Maximum On State Collector Current50 mA50 mA-
Collector Emitter Voltage VCEO Max50 V--
Collector Emitter Breakdown Voltage50 V50 V-
Collector Emitter Saturation Voltage200 mV200 mV-
Dark Current100 nA100 nA-
Rise Time-9 us 12 us-
Fall Time-9 us 12 us-
Pd Power Dissipation220 mW--
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 125 C+ 125 C-
Height5.5 mm--
Length5.6 mm--
TypeChipChip-
Wavelength880 nm880nm-
Width5.6 mm--
BrandOSRAM Opto Semiconductors--
Half Intensity Angle Degrees40 deg--
Light Current1.8 uA--
Product TypePhototransistors--
QualificationAEC-Q101--
Factory Pack Quantity1000--
SubcategoryOptical Detectors and Sensors--
Part # AliasesQ62702P0015Q62702P3578-
Series-*-
Packaging-Bulk-
Package Case-TO-18-
Operating Temperature--40°C ~ 125°C (TA)-
Mounting Type-Through Hole-
Power Max-220mW-
Current Collector Ic Max-50mA-
Voltage Collector Emitter Breakdown Max-50V-
Orientation-Top View-
Current Dark Id Max-100nA-
Viewing Angle-80°-
Pd Power Dissipation-220 mW-
Collector Emitter Voltage VCEO Max-50 V-
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