![]() | ![]() | ||
| PartNumber | BPY 62 | BPY62-2 | BPY62-3 |
| Description | Phototransistors PHOTODIODE | Phototransistor, Npn, 850nm Peak Wavelength, 50m, Can-4.7 | |
| Manufacturer | Osram Opto Semiconductor | - | - |
| Product Category | Phototransistors | - | - |
| RoHS | Y | - | - |
| Package / Case | TO-18 | - | - |
| Peak Wavelength | 830 nm | - | - |
| Maximum On State Collector Current | 100 mA | - | - |
| Dark Current | 50 nA | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Height | 6.2 mm | - | - |
| Length | 5.6 mm | - | - |
| Type | Chip | - | - |
| Width | 5.6 mm | - | - |
| Brand | OSRAM Opto Semiconductors | - | - |
| Half Intensity Angle Degrees | 8 deg | - | - |
| Product Type | Phototransistors | - | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Optical Detectors and Sensors | - | - |
| Part # Aliases | Q60215Y0062 | - | - |
| Unit Weight | 0.010582 oz | - | - |