 |  | | |
| PartNumber | BSC019N04NS G | BSC019N04NS | BSC019N04NS G(SP00038829 |
| Description | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
| Manufacturer | Infineon | INFINEON | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TDSON-8 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 29 A | - | - |
| Rds On Drain Source Resistance | 1.9 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Configuration | Single | Single Quad Drain Triple Source | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 6.6 ns | 6.6 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5.6 ns | 5.6 ns | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 33 ns | 33 ns | - |
| Typical Turn On Delay Time | 22 ns | 22 ns | - |
| Part # Aliases | BSC019N04NSGATMA1 BSC19N4NSGXT SP000388299 | - | - |
| Unit Weight | 0.003527 oz | - | - |
| Part Aliases | - | BSC019N04NSGATMA1 BSC019N04NSGXT SP000388299 | - |
| Package Case | - | TDSON-8 | - |
| Pd Power Dissipation | - | 2.5 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 29 A | - |
| Vds Drain Source Breakdown Voltage | - | 40 V | - |
| Rds On Drain Source Resistance | - | 1.9 mOhms | - |