BSC025N03MS G vs BSC025N03MSGATMA1 vs BSC025N03MSGATMA1 , TDA5

 
PartNumberBSC025N03MS GBSC025N03MSGATMA1BSC025N03MSGATMA1 , TDA5
DescriptionMOSFET N-Ch 30V 100A TSDSON-8 OptiMOS 3MMOSFET N-Ch 30V 100A TSDSON-8 OptiMOS 3M
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTDSON-8TDSON-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current40 A40 A-
Rds On Drain Source Resistance6.7 mOhms6.7 mOhms-
Vgs th Gate Source Threshold Voltage1 V1 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge27 nC27 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation35 W35 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.27 mm1.27 mm-
Length5.9 mm5.9 mm-
SeriesOptiMOS 3MOptiMOS 3M-
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm5.15 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min28 S28 S-
Fall Time2.4 ns2.4 ns-
Product TypeMOSFETMOSFET-
Rise Time3 ns3 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time18 ns18 ns-
Typical Turn On Delay Time4.3 ns4.3 ns-
Part # AliasesBSC025N03MSGATMA1 BSC25N3MSGXT SP000311505BSC025N03MS BSC25N3MSGXT G SP000311505-
Unit Weight-0.021341 oz-
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