PartNumber | BSC028N06NSATMA1 | BSC028N06NS | BSC028N06NS3G |
Description | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | |
Manufacturer | Infineon | Infineon | INFINEO |
Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TDSON-8 | PG-TDSON-8 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
Id Continuous Drain Current | 100 A | 100 A | - |
Rds On Drain Source Resistance | 2.5 mOhms | 2.8 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2.1 V | 2.1 V | - |
Vgs Gate Source Voltage | 20 V | 10 V | - |
Qg Gate Charge | 49 nC | 37 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 83 W | 83 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | Reel |
Height | 1.27 mm | 1.27 mm | - |
Length | 5.9 mm | 5.9 mm | - |
Product | OptiMOS Power | - | - |
Series | OptiMOS 5 | OptiMOS 5 | BSC028N06 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | OptiMOS Power Transistor | - | - |
Width | 5.15 mm | 5.15 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 50 S | 50 S | - |
Fall Time | 8 ns | 8 ns | 8 ns |
Product Type | MOSFET | MOSFET | - |
Rise Time | 38 ns | 38 ns | 38 ns |
Factory Pack Quantity | 5000 | 5000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 19 ns | 19 ns | 19 ns |
Typical Turn On Delay Time | 11 ns | 11 ns | 11 ns |
Part # Aliases | BSC028N06NS BSC28N6NSXT SP000917416 | BSC028N06NSATMA1 BSC28N6NSXT SP000917416 | - |
Unit Weight | - | 0.003527 oz | - |
Part Aliases | - | - | BSC028N06NSATMA1 BSC028N06NSXT SP000917416 |
Package Case | - | - | DSON-8 |
Pd Power Dissipation | - | - | 83 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 100 A |
Vds Drain Source Breakdown Voltage | - | - | 60 V |
Rds On Drain Source Resistance | - | - | 2.8 mOhms |
Qg Gate Charge | - | - | 37 nC |
Forward Transconductance Min | - | - | 100 S / 50 S |