 |  |  | |
| PartNumber | BSC037N08NS5ATMA1 | BSC037N08NS5TATMA1 | BSC037N08NS5 |
| Description | MOSFET N-Ch 80V 100A TDSON-8 | MOSFET TRENCH 40<-<100V | Trans MOSFET N-CH 80V 100A 8-Pin TDSON EP |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PG-TDSON-8 | TDSON-8 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 80 V | 80 V | - |
| Id Continuous Drain Current | 100 A | 100 A | - |
| Rds On Drain Source Resistance | 3.7 mOhms | 3.7 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.2 V | 2.2 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Qg Gate Charge | 46 nC | 58 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 114 W | 114 W | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Series | OptiMOS 5 | BSC037N08 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 47 S | 47 S | - |
| Fall Time | 7 ns | 7 ns | 7 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 10 ns | 10 ns | 10 ns |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 26 ns | 26 ns | 26 ns |
| Typical Turn On Delay Time | 14 ns | 14 ns | 14 ns |
| Part # Aliases | BSC037N08NS5 SP001294988 | BSC037N08NS5T SP004475134 | - |
| Unit Weight | 0.017870 oz | - | 0.017870 oz |
| Part Aliases | - | - | BSC037N08NS5 SP001294988 |
| Package Case | - | - | TDSON-8 |
| Pd Power Dissipation | - | - | 114 W |
| Vgs Gate Source Voltage | - | - | +/- 20 V |
| Id Continuous Drain Current | - | - | 100 A |
| Vds Drain Source Breakdown Voltage | - | - | 80 V |
| Vgs th Gate Source Threshold Voltage | - | - | 2.2 V |
| Rds On Drain Source Resistance | - | - | 5.3 mOhms |
| Qg Gate Charge | - | - | 46 nC |
| Forward Transconductance Min | - | - | 47 S |