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| PartNumber | BSC054N04NS G | BSC054N04NSGATMA1 | BSC054N04NSGAT |
| Description | MOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3 | MOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3 | |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PG-TDSON-8 | TDSON-8 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 81 A | 81 A | - |
| Rds On Drain Source Resistance | 5.4 mOhms | 4.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Qg Gate Charge | 26 nC | 34 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 57 W | 57 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
| Height | 1.27 mm | 1.27 mm | - |
| Length | 5.9 mm | 5.9 mm | - |
| Series | OptiMOS 3 | OptiMOS 3 | OptiMOS |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.15 mm | 5.15 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 34 S | 34 S | - |
| Fall Time | 3.6 ns | 3.6 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 2.6 ns | 2.6 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 16 ns | 16 ns | - |
| Typical Turn On Delay Time | 11 ns | 11 ns | - |
| Part # Aliases | BSC054N04NSGATMA1 BSC54N4NSGXT SP000354808 | BSC054N04NS BSC54N4NSGXT G SP000354808 | - |
| Unit Weight | 0.003527 oz | - | - |
| Part Aliases | - | - | BSC054N04NS BSC054N04NSGXT G SP000354808 |
| Package Case | - | - | 8-PowerTDFN |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | PG-TDSON-8 |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 57W |
| Drain to Source Voltage Vdss | - | - | 40V |
| Input Capacitance Ciss Vds | - | - | 2800pF @ 20V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 17A (Ta), 81A (Tc) |
| Rds On Max Id Vgs | - | - | 5.4 mOhm @ 50A, 10V |
| Vgs th Max Id | - | - | 4V @ 27μA |
| Gate Charge Qg Vgs | - | - | 34nC @ 10V |