PartNumber | BSC076N06NS3 G | BSC076N06NS3GATMA1 | BSC076N06NS3GATMA1 , TDA |
Description | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TDSON-8 | PG-TDSON-8 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
Id Continuous Drain Current | 50 A | 50 A | - |
Rds On Drain Source Resistance | 6.2 mOhms | 7.6 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
Vgs Gate Source Voltage | 20 V | 10 V | - |
Qg Gate Charge | 50 nC | 37 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 69 W | 69 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | - |
Height | 1.27 mm | 1.27 mm | - |
Length | 5.9 mm | 5.9 mm | - |
Series | OptiMOS 3 | OptiMOS 3 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 5.15 mm | 5.15 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 30 S | 30 S | - |
Fall Time | 5 ns | 5 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 40 ns | 40 ns | - |
Factory Pack Quantity | 5000 | 5000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 20 ns | 20 ns | - |
Typical Turn On Delay Time | 15 ns | 15 ns | - |
Part # Aliases | BSC076N06NS3GATMA1 BSC76N6NS3GXT SP000453656 | BSC076N06NS3 BSC76N6NS3GXT G SP000453656 | - |
Unit Weight | 0.003527 oz | 0.010582 oz | - |