PartNumber | BSC0906NS | BSC0906NS 0906NS | BSC0906NS E8189 |
Description | MOSFET N-Ch 30V 63A TDSON-8 OptiMOS | Trans MOSFET N-CH 30V 18A 8-Pin TDSON T/R (Alt: BSC0906NS E8189) | |
Manufacturer | Infineon | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | PG-TDSON-8 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 63 A | - | - |
Rds On Drain Source Resistance | 4.5 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 13 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 30 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | OptiMOS | - | - |
Packaging | Reel | - | - |
Height | 1.27 mm | - | - |
Length | 5.9 mm | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 5.15 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 40 S | - | - |
Fall Time | 6.4 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 6.8 nS | - | - |
Factory Pack Quantity | 5000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 12 nS | - | - |
Typical Turn On Delay Time | 8.4 ns | - | - |
Part # Aliases | BSC0906NSATMA1 BSC96NSXT SP000893360 | - | - |
Unit Weight | 0.003527 oz | - | - |