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| PartNumber | BSC097N06NSATMA1 | BSC097N06NS | BSC097N06NSTATMA1 |
| Description | MOSFET N-Ch 60V 46A TDSON-8 | MOSFET N-Ch 60V 46A TDSON-8 | MOSFET DIFFERENTIATED MOSFETS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | TDSON-8 | PG-TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
| Id Continuous Drain Current | 46 A | 46 A | 46 A |
| Rds On Drain Source Resistance | 8 mOhms | 8 mOhms | 9.7 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.1 V | 2.1 V | 2.1 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 10 V |
| Qg Gate Charge | 15 nC | 15 nC | 12 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 36 W | 36 W | 36 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | - |
| Length | 5.9 mm | 5.9 mm | - |
| Series | OptiMOS 5 | OptiMOS 5 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.15 mm | 5.15 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 24 S | 24 S | 24 S |
| Fall Time | 2 ns | 2 ns | 2 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 2 ns | 2 ns | 2 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 10 ns | 10 ns | 10 ns |
| Typical Turn On Delay Time | 6 ns | 6 ns | 6 ns |
| Part # Aliases | BSC097N06NS SP001067004 | BSC097N06NSATMA1 SP001067004 | BSC097N06NST SP001666496 |
| Unit Weight | 0.003527 oz | 0.003527 oz | - |