PartNumber | BSC110N06NS3 G | BSC110N06NS3GATMA1 | BSC110N06NS3GATMA1 , TDZ |
Description | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TDSON-8 | PG-TDSON-8 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
Id Continuous Drain Current | 50 A | 50 A | - |
Rds On Drain Source Resistance | 9 mOhms | 11 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
Vgs Gate Source Voltage | 20 V | 10 V | - |
Qg Gate Charge | 33 nC | 25 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 50 W | 50 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | - |
Height | 1.27 mm | 1.27 mm | - |
Length | 5.9 mm | 5.9 mm | - |
Series | OptiMOS 3 | OptiMOS 3 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 5.15 mm | 5.15 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 25 S | 25 S | - |
Fall Time | 6 ns | 6 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 77 ns | 77 ns | - |
Factory Pack Quantity | 5000 | 5000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 14 ns | 14 ns | - |
Typical Turn On Delay Time | 10 ns | 10 ns | - |
Part # Aliases | BSC110N06NS3GATMA1 BSC11N6NS3GXT SP000453668 | BSC110N06NS3 BSC11N6NS3GXT G SP000453668 | - |
Unit Weight | 0.003527 oz | 0.007055 oz | - |