PartNumber | BSD223P H6327 | BSD223PH6327XTSA1 | BSD223PH6327XTSA1-CUT TAPE |
Description | MOSFET P-Ch | MOSFET P-Ch DPAK-2 | |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-363-6 | PG-SOT-363-6 | - |
Number of Channels | 2 Channel | 2 Channel | - |
Transistor Polarity | P-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
Id Continuous Drain Current | 390 mA | 390 mA | - |
Rds On Drain Source Resistance | 700 mOhms | 1.2 Ohms | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | 600 mV | - |
Vgs Gate Source Voltage | 12 V | 4.5 V | - |
Qg Gate Charge | - 620 pC | - 500 pC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 250 mW | 250 mW | - |
Configuration | Dual | Dual | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | - |
Height | 0.9 mm | 0.9 mm | - |
Length | 2 mm | 2 mm | - |
Series | BSD223 | BSD223 | - |
Transistor Type | 2 P-Channel | 2 P-Channel | - |
Width | 1.25 mm | 1.25 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 350 mS | 350 mS | - |
Development Kit | - | - | - |
Fall Time | 3.2 ns | 3.2 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 5 ns | 5 ns | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 5.1 ns | 5.1 ns | - |
Typical Turn On Delay Time | 3.8 ns | 3.8 ns | - |
Part # Aliases | BSD223PH6327XT BSD223PH6327XTSA1 SP000924074 | BSD223P BSD223PH6327XT H6327 SP000924074 | - |
Unit Weight | 0.000265 oz | 0.010582 oz | - |