PartNumber | BSM250D17P2E004 | BSM252F | BSM254F |
Description | Discrete Semiconductor Modules 1700V Vdss; 250A Id SiC Pwr Module | Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET | |
Manufacturer | ROHM Semiconductor | - | - |
Product Category | Discrete Semiconductor Modules | - | - |
RoHS | Y | - | - |
Product | Power Semiconductor Modules | - | - |
Type | Half Bridge Module | - | - |
Vgs Gate Source Voltage | - 6 V, 22 V | - | - |
Mounting Style | Screw Mount | - | - |
Package / Case | Module | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | BSMx | - | - |
Packaging | Tray | - | - |
Configuration | Half-Bridge | - | - |
Brand | ROHM Semiconductor | - | - |
Transistor Polarity | N-Channel | - | - |
Typical Delay Time | 55 ns | - | - |
Fall Time | 70 ns | - | - |
Id Continuous Drain Current | 250 A | - | - |
Pd Power Dissipation | 1800 W | - | - |
Product Type | Discrete Semiconductor Modules | - | - |
Rise Time | 55 ns | - | - |
Factory Pack Quantity | 4 | - | - |
Subcategory | Discrete Semiconductor Modules | - | - |
Typical Turn Off Delay Time | 195 ns | - | - |
Typical Turn On Delay Time | 55 ns | - | - |
Vds Drain Source Breakdown Voltage | 1700 V | - | - |
Vgs th Gate Source Threshold Voltage | 1.6 V | - | - |