BSM35GB120DN2 vs BSM35GB120DLC vs BSM35GB120DN2HOSA1

 
PartNumberBSM35GB120DN2BSM35GB120DLCBSM35GB120DN2HOSA1
DescriptionIGBT Modules 1200V 35A DUALIGBT 2 MED POWER 34MM-1
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSN--
ProductIGBT Silicon Modules--
ConfigurationHalf Bridge--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage3.2 V--
Continuous Collector Current at 25 C50 A--
Gate Emitter Leakage Current150 nA--
Pd Power Dissipation280 W--
Package / CaseHalf Bridge1--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
Height30.5 mm--
Length94 mm--
Width34 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesBSM35GB120DN2HOSA1 SP000100461--
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