BSO615CGHUMA1 vs BSO615C G vs BSO615CGHUMA1 , TDZV7.5

PartNumber	BSO615CGHUMA1	BSO615C G	BSO615CGHUMA1 , TDZV7.5
Description	MOSFET N and P-Ch 60V 3.1A, -2A DSO-8	MOSFET N and P-Ch 60V 3.1A, -2A DSO-8
Manufacturer	Infineon	Infineon	-
Product Category	MOSFET	MOSFET	-
RoHS	Y	Y	-
Technology	Si	Si	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	SO-8	SO-8	-
Number of Channels	2 Channel	2 Channel	-
Transistor Polarity	N-Channel, P-Channel	N-Channel, P-Channel	-
Vds Drain Source Breakdown Voltage	60 V	60 V	-
Id Continuous Drain Current	3.1 A, 2 A	3.1 A, 2 A	-
Rds On Drain Source Resistance	70 mOhms, 190 mOhms	70 mOhms, 190 mOhms	-
Vgs th Gate Source Threshold Voltage	1.2 V, 2 V	1.2 V, 2 V	-
Vgs Gate Source Voltage	20 V	20 V	-
Qg Gate Charge	22.5 nC, 20 nC	22.5 nC, 20 nC	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Pd Power Dissipation	2 W	2 W	-
Configuration	Dual	Dual	-
Channel Mode	Enhancement	Enhancement	-
Packaging	Reel	Reel	-
Height	1.75 mm	1.75 mm	-
Length	4.9 mm	4.9 mm	-
Series	BSO615	BSO615	-
Transistor Type	1 N-Channel, 1 P-Channel	1 N-Channel, 1 P-Channel	-
Width	3.9 mm	3.9 mm	-
Brand	Infineon Technologies	Infineon Technologies	-
Forward Transconductance Min	2.25 S, 1.2 S	2.25 S, 1.2 S	-
Fall Time	18 ns, 90 ns	18 ns, 90 ns	-
Moisture Sensitive	Yes	Yes	-
Product Type	MOSFET	MOSFET	-
Rise Time	75 ns, 105 ns	75 ns, 105 ns	-
Factory Pack Quantity	2500	2500	-
Subcategory	MOSFETs	MOSFETs	-
Typical Turn Off Delay Time	25 ns, 125 ns	25 ns, 125 ns	-
Typical Turn On Delay Time	16 ns, 24 ns	16 ns, 24 ns	-
Part # Aliases	BSO615C BSO615CGXT G SP000216311	BSO615CGHUMA1 BSO615CGXT SP000216311	-
Unit Weight	0.019048 oz	0.019048 oz	-
Tradename	-	SIPMOS	-