BSP318S H6327 vs BSP318S vs BSP318S E6327

 
PartNumberBSP318S H6327BSP318SBSP318S E6327
DescriptionMOSFET N-Ch 60V 2.6A SOT-223-3MOSFET, N CHANNEL, 60V, 2.6A, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:2.6A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.07ohm, Rds(on) Test Voltage Vgs:4.5V,MOSFET N-CH 60V 2.6A SOT-223
ManufacturerInfineonInfineonINFINEON
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySi-MOSFET (Metal Oxide)
Mounting StyleSMD/SMT--
Package / CasePG-SOT-223-4-TO-261-4, TO-261AA
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current2.6 A--
Rds On Drain Source Resistance90 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge14 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.8 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel-Tape & Reel (TR)
Height1.6 mm--
Length6.5 mm--
SeriesBSP318-SIPMOS
Transistor Type1 N-Channel--
Width3.5 mm--
BrandInfineon Technologies--
Forward Transconductance Min2.4 S--
Fall Time15 ns--
Product TypeMOSFET--
Rise Time15 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns--
Typical Turn On Delay Time12 ns--
Part # AliasesBSP318SH6327XTSA1 SP001058838--
Unit Weight0.003951 oz--
Part Status--Obsolete
FET Type--N-Channel
Drain to Source Voltage (Vdss)--60V
Current Continuous Drain (Id) @ 25°C--2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)--4.5V, 10V
Vgs(th) (Max) @ Id--2V @ 20A
Gate Charge (Qg) (Max) @ Vgs--20nC @ 10V
Vgs (Max)--±20V
Input Capacitance (Ciss) (Max) @ Vds--380pF @ 25V
FET Feature---
Power Dissipation (Max)--1.8W (Ta)
Rds On (Max) @ Id, Vgs--90 mOhm @ 2.6A, 10V
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--PG-SOT223-4
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