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| PartNumber | BSS123N H6327 | BSS123NH6327XT | BSS123NH6327S |
| Description | MOSFET N-Ch 100V 190mA SOT-23-3 | MOSFET N-Ch 100V 190mA SOT-23-3 | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | SOT-23-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 190 mA | 190 mA | - |
| Rds On Drain Source Resistance | 2.4 Ohms | 2.4 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 800 mV | 800 mV | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 900 pC | 900 pC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 500 mW (1/2 W) | 500 mW (1/2 W) | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | - |
| Height | 1.1 mm | 1.1 mm | - |
| Length | 2.9 mm | 2.9 mm | - |
| Series | BSS123 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 1.3 mm | 1.3 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 410 mS | 410 mS | - |
| Fall Time | 22 ns | 22 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 3.2 ns | 3.2 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 7.4 ns | 7.4 ns | - |
| Typical Turn On Delay Time | 2.3 ns | 2.3 ns | - |
| Part # Aliases | BSS123NH6327XT BSS123NH6327XTSA1 SP000870646 | BSS123N BSS123NH6327XTSA1 H6327 SP000870646 | - |
| Unit Weight | 0.000282 oz | 0.000282 oz | - |