BSS123TA vs BSS123T-HF vs BSS123 T/R

 
PartNumberBSS123TABSS123T-HFBSS123 T/R
DescriptionMOSFET N-Chnl 100VMOSFET 100V 0.19A SOT-23INSTOCK
ManufacturerDiodes IncorporatedComchip Technology-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3SOT-23-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current170 mA190 mA-
Rds On Drain Source Resistance6 Ohms5.6 Ohms-
Vgs Gate Source Voltage20 V100 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation360 mW300 mW-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height1 mm--
Length2.9 mm--
ProductMOSFET Small Signal--
SeriesBSS123--
Transistor Type1 N-Channel1 N-Channel-
TypeFET--
Width1.3 mm--
BrandDiodes IncorporatedComchip Technology-
Fall Time10 ns--
Product TypeMOSFETMOSFET-
Rise Time10 ns15.2 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time15 ns10.2 ns-
Typical Turn On Delay Time10 ns4.2 ns-
Unit Weight0.000282 oz--
Vgs th Gate Source Threshold Voltage-2.5 V-
Qg Gate Charge-2.8 nC-
Termination Style-SMD/SMT-
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