PartNumber | BSS223PW H6327 | BSS223PW | BSS223PW E6327 |
Description | MOSFET P-Ch -20V -390mA SOT-323-3 | ||
Manufacturer | Infineon | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-323-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 20 V | - | - |
Id Continuous Drain Current | 390 mA | - | - |
Rds On Drain Source Resistance | 2.1 Ohms | - | - |
Vgs th Gate Source Threshold Voltage | 600 mV | - | - |
Vgs Gate Source Voltage | 2.5 V | - | - |
Qg Gate Charge | - 0.5 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 250 mW | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | - | - |
Height | 1.1 mm | - | - |
Length | 2.9 mm | - | - |
Series | BSS223 | - | - |
Transistor Type | 1 P-Channel | - | - |
Width | 1.3 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 0.35 S | - | - |
Fall Time | 3.2 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 5 ns | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 5.1 ns | - | - |
Typical Turn On Delay Time | 3.8 ns | - | - |
Part # Aliases | BSS223PWH6327XT BSS223PWH6327XTSA1 SP000843010 | - | - |
Unit Weight | 0.000176 oz | - | - |