BSS308PEH6327XT vs BSS308PEH6327XTSA1 vs BSS308PE H6327

PartNumber	BSS308PEH6327XT	BSS308PEH6327XTSA1	BSS308PE H6327
Description	MOSFET P-Ch -30V -2A SOT-23-3	MOSFET P-Ch -30V -2A SOT-23-3	MOSFET P-Ch -30V -2A SOT-23-3
Manufacturer	Infineon	Infineon	Infineon
Product Category	MOSFET	MOSFET	MOSFET
RoHS	Y	Y	Y
Technology	Si	Si	Si
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	SOT-23-3	PG-SOT-23-3	SOT-23-3
Number of Channels	1 Channel	1 Channel	1 Channel
Transistor Polarity	P-Channel	P-Channel	P-Channel
Vds Drain Source Breakdown Voltage	30 V	30 V	30 V
Id Continuous Drain Current	2 A	2 A	2 A
Rds On Drain Source Resistance	62 mOhms	62 mOhms	62 mOhms
Vgs th Gate Source Threshold Voltage	2 V	2 V	2 V
Vgs Gate Source Voltage	20 V	10 V	20 V
Qg Gate Charge	- 5 nC	- 5 nC	- 5 nC
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Pd Power Dissipation	500 mW (1/2 W)	500 mW (1/2 W)	500 mW (1/2 W)
Configuration	Single	Single	Single
Channel Mode	Enhancement	Enhancement	Enhancement
Qualification	AEC-Q101	AEC-Q101	AEC-Q101
Packaging	Reel	Reel	Reel
Height	1.1 mm	1.1 mm	1.1 mm
Length	2.9 mm	2.9 mm	2.9 mm
Series	BSS308	BSS308	BSS308
Transistor Type	1 P-Channel	1 P-Channel	1 P-Channel
Width	1.3 mm	1.3 mm	1.3 mm
Brand	Infineon Technologies	Infineon Technologies	Infineon Technologies
Forward Transconductance Min	4.6 S	4.6 S	4.6 S
Fall Time	2.8 ns	2.8 ns	2.8 ns
Product Type	MOSFET	MOSFET	MOSFET
Rise Time	7.7 ns	7.7 ns	7.7 ns
Factory Pack Quantity	3000	3000	3000
Subcategory	MOSFETs	MOSFETs	MOSFETs
Typical Turn Off Delay Time	15.3 ns	15.3 ns	15.3 ns
Typical Turn On Delay Time	5.6 ns	5.6 ns	5.6 ns
Part # Aliases	BSS308PEH6327XTSA1 SP000928942	BSS308PE BSS38PEH6327XT H6327 SP000928942	BSS308PEH6327XTSA1 BSS38PEH6327XT SP000928942
Unit Weight	0.000282 oz	0.000282 oz	0.000282 oz