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| PartNumber | BSS816NW H6327 | BSS816NW L6327 | BSS816NW |
| Description | MOSFET N-Ch 20V 1.4A SOT-323-3 | MOSFET N-Ch 20V | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-323-3 | SOT-323-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
| Id Continuous Drain Current | 1.4 A | - | - |
| Rds On Drain Source Resistance | 107 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 300 mV | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 600 pC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 500 mW (1/2 W) | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | - |
| Height | 1.1 mm | 0.9 mm | - |
| Length | 2.9 mm | 2 mm | - |
| Series | BSS816 | BSS816 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 1.3 mm | 1.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 4.9 S | - | - |
| Fall Time | 2.2 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 9 ns | - | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 11 ns | - | - |
| Typical Turn On Delay Time | 5.3 ns | - | - |
| Part # Aliases | BSS816NWH6327XT BSS816NWH6327XTSA1 SP000917562 | BSS816NWL6327HTMA1 | - |
| Unit Weight | 0.000176 oz | 0.000176 oz | - |
| Product | - | MOSFET Small Signal | - |