 | |  | |
| PartNumber | BSS83P H6327 | BSS83PH6327XT | BSS83PH6327TR-ND |
| Description | MOSFET P-Ch SOT-23-3 | MOSFET P-Ch -60V -330mA SOT-23-3 | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | SOT-23-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 330 mA | 330 mA | - |
| Rds On Drain Source Resistance | 3 Ohms | 1.4 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 2 V | - |
| Vgs Gate Source Voltage | 4.5 V | 20 V | - |
| Qg Gate Charge | 2.38 nC | 3.57 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 360 mW | 360 mW | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | - |
| Height | 1.1 mm | 1.1 mm | - |
| Length | 2.9 mm | 2.9 mm | - |
| Product | MOSFET Small Signal | MOSFET Small Signal | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Width | 1.3 mm | 1.3 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 0.24 S | 240 mS | - |
| Fall Time | 61 ns | 61 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 71 ns | 71 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 56 ns | 56 ns | - |
| Typical Turn On Delay Time | 23 ns | 23 ns | - |
| Part # Aliases | BSS83PH6327XT BSS83PH6327XTSA1 SP000702486 | BSS83P BSS83PH6327XTSA1 H6327 SP000702486 | - |
| Unit Weight | 0.000282 oz | 0.000282 oz | - |
| Series | - | BSS83 | - |