BSZ058N03MS G vs BSZ058N03MSG QFN8 vs BSZ058N03MSGATMA1

 
PartNumberBSZ058N03MS GBSZ058N03MSG QFN8BSZ058N03MSGATMA1
DescriptionMOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3MMOSFET N-CH 30V 40A TSDSON-8
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTSDSON-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current40 A--
Rds On Drain Source Resistance4.2 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge40 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation45 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height1.1 mm--
Length3.3 mm--
SeriesOptiMOS 3M--
Transistor Type1 N-Channel--
Width3.3 mm--
BrandInfineon Technologies--
Forward Transconductance Min35 S--
Fall Time3 ns--
Product TypeMOSFET--
Rise Time3.8 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time24 ns--
Typical Turn On Delay Time6 ns--
Part # AliasesBSZ058N03MSGATMA1 BSZ58N3MSGXT SP000311508--
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