PartNumber | BSZ076N06NS3 G | BSZ076N06NS3GATMA1 | BSZ076N06NS3GXT |
Description | MOSFET N-Ch 60V 20A TDSON-8 OptiMOS 3 | MOSFET MV POWER MOS | Trans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R - Tape and Reel (Alt: BSZ076N06NS3GATMA1) |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TSDSON-8 | TSDSON-8 | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 60 V | - | - |
Id Continuous Drain Current | 20 A | - | - |
Rds On Drain Source Resistance | 7.6 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 3 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 37 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 69 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | - |
Height | 1.1 mm | 1.1 mm | - |
Length | 3.3 mm | 3.3 mm | - |
Series | OptiMOS 3 | - | - |
Transistor Type | 1 N-Channel | - | - |
Type | OptiMOS 3 Power-Transistor | - | - |
Width | 3.3 mm | 3.3 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 39 S, 20 S | - | - |
Fall Time | 5 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 40 ns | - | - |
Factory Pack Quantity | 5000 | - | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 20 ns | - | - |
Typical Turn On Delay Time | 15 ns | - | - |
Part # Aliases | BSZ076N06NS3GATMA1 BSZ76N6NS3GXT SP000454420 | BSZ076N06NS3 BSZ76N6NS3GXT G SP000454420 | - |
Unit Weight | 0.002681 oz | - | - |