PartNumber | BSZ084N08NS5ATMA1 | BSZ086P03NE | BSZ086P03NS3 |
Description | MOSFET N-Ch 80V 40A TSDSON-8 | ||
Manufacturer | Infineon | - | Infineon Technologies |
Product Category | MOSFET | - | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | TSDSON-8 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | P-Channel |
Vds Drain Source Breakdown Voltage | 80 V | - | - |
Id Continuous Drain Current | 40 A | - | - |
Rds On Drain Source Resistance | 11.9 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2.2 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 20 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 63 W | - | - |
Configuration | Single | - | Single Quad Drain Triple Source |
Channel Mode | Enhancement | - | Enhancement |
Tradename | OptiMOS | - | OptiMOS |
Packaging | Reel | - | Digi-ReelR Alternate Packaging |
Height | 1.1 mm | - | - |
Length | 3.3 mm | - | - |
Series | OptiMOS 5 | - | OptiMOS |
Transistor Type | 1 N-Channel | - | 1 P-Channel |
Width | 3.3 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 20 S | - | - |
Fall Time | 5 ns | - | 8 ns |
Product Type | MOSFET | - | - |
Rise Time | 5 ns | - | 46 ns |
Factory Pack Quantity | 5000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 25 ns | - | 35 ns |
Typical Turn On Delay Time | 13 ns | - | 16 ns |
Part # Aliases | BSZ084N08NS5 SP001227056 | - | - |
Part Aliases | - | - | BSZ086P03NS3EGATMA1 BSZ086P03NS3EGXT SP000473016 |
Package Case | - | - | 8-PowerTDFN |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | PG-TSDSON-8 (3.3x3.3) |
FET Type | - | - | MOSFET P-Channel, Metal Oxide |
Power Max | - | - | 69W |
Drain to Source Voltage Vdss | - | - | 30V |
Input Capacitance Ciss Vds | - | - | 4785pF @ 15V |
FET Feature | - | - | Standard |
Current Continuous Drain Id 25°C | - | - | 13.5A (Ta), 40A (Tc) |
Rds On Max Id Vgs | - | - | 8.6 mOhm @ 20A, 10V |
Vgs th Max Id | - | - | 1.9V @ 105μA |
Gate Charge Qg Vgs | - | - | 57.5nC @ 10V |
Pd Power Dissipation | - | - | 69 W |
Vgs Gate Source Voltage | - | - | 25 V |
Id Continuous Drain Current | - | - | 13.5 A |
Vds Drain Source Breakdown Voltage | - | - | - 30 V |
Vgs th Gate Source Threshold Voltage | - | - | - 3.1 V |
Rds On Drain Source Resistance | - | - | 8.6 mOhms |
Qg Gate Charge | - | - | 21.4 nC |
Forward Transconductance Min | - | - | 43 S |