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| PartNumber | BSZ120P03NS3GATMA1 | BSZ120P03NS3 G | BSZ120P03NS3GATMA1 , TG1 |
| Description | MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3 | MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3 | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSDSON-8 | TSDSON-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 40 A | 40 A | - |
| Rds On Drain Source Resistance | 9 mOhms | 9 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3.1 V | 3.1 V | - |
| Vgs Gate Source Voltage | 25 V | 25 V | - |
| Qg Gate Charge | 45 nC | 45 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 52 W | 52 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Height | 1.1 mm | 1.1 mm | - |
| Length | 3.3 mm | 3.3 mm | - |
| Series | BSZ120P03 | OptiMOS P3 | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Width | 3.3 mm | 3.3 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 22 S | 22 S | - |
| Fall Time | 5 ns | 5 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 11 ns | 11 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 23 ns | 23 ns | - |
| Typical Turn On Delay Time | 13 ns | 13 ns | - |
| Part # Aliases | BSZ120P03NS3 BSZ12P3NS3GXT G SP000709736 | BSZ120P03NS3GATMA1 BSZ12P3NS3GXT SP000709736 | - |
| Unit Weight | 0.001404 oz | - | - |
| Tradename | - | OptiMOS | - |