BSZ120P03NS3GATMA1 vs BSZ120P03NS3GATMA1 , TG1 vs BSZ120P03NS3GATMA1-CUT TAPE

 
PartNumberBSZ120P03NS3GATMA1BSZ120P03NS3GATMA1 , TG1BSZ120P03NS3GATMA1-CUT TAPE
DescriptionMOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTSDSON-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current40 A--
Rds On Drain Source Resistance9 mOhms--
Vgs th Gate Source Threshold Voltage3.1 V--
Vgs Gate Source Voltage25 V--
Qg Gate Charge45 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation52 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.1 mm--
Length3.3 mm--
SeriesBSZ120P03--
Transistor Type1 P-Channel--
Width3.3 mm--
BrandInfineon Technologies--
Forward Transconductance Min22 S--
Fall Time5 ns--
Product TypeMOSFET--
Rise Time11 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time23 ns--
Typical Turn On Delay Time13 ns--
Part # AliasesBSZ120P03NS3 BSZ12P3NS3GXT G SP000709736--
Unit Weight0.001404 oz--
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