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BU508AF vs BU508AF.127 vs BU508AF/DF

 
PartNumberBU508AFBU508AF.127BU508AF/DF
DescriptionBipolar Transistors - BJT NPN Power Transistor
ManufacturerSTMicroelectronics--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseISOWATT-218FX-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max700 V--
Collector Base Voltage VCBO9 V--
Emitter Base Voltage VEBO9 V--
Maximum DC Collector Current8 A--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesBU508AF--
Height14.7 mm--
Length26.7 mm--
Width15.7 mm--
BrandSTMicroelectronics--
Continuous Collector Current8 A--
Pd Power Dissipation50000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity300--
SubcategoryTransistors--
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