BUL1102EFP vs BUL1102E vs BUL1102E,BUL1102EFP

 
PartNumberBUL1102EFPBUL1102EBUL1102E,BUL1102EFP
DescriptionBipolar Transistors - BJT High voltage fast switching NPN power transistorBipolar Transistors - BJT High voltage fast switching NPN power transistor
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220FP-3TO-220-3-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max450 V450 V-
Emitter Base Voltage VEBO12 V12 V-
Maximum DC Collector Current4 A4 A-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesBUL1102EBUL1102E-
Height16.4 mm15.75 mm-
Length10.4 mm10.4 mm-
PackagingTubeTube-
Width4.6 mm4.6 mm-
BrandSTMicroelectronicsSTMicroelectronics-
Continuous Collector Current4 A4 A-
DC Collector/Base Gain hfe Min35 at 250 mA, 5 V, 12 at 2 A, 5 V35 at 250 mA, 5 V, 12 at 2 A, 5 V-
Pd Power Dissipation30 W70 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity10001000-
SubcategoryTransistorsTransistors-
Unit Weight0.090478 oz0.211644 oz-
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