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| PartNumber | CDM22010-650 SL | CDM22011-600LRFP | CDM22010-650 |
| Description | MOSFET N-Ch 10A PFC FET 650V 8.0nC 0.88Ohm | MOSFET N-Ch 11A PFC FET 600V 4.45nC 0.3Ohm | MOSFET 650Vds 30Vgs 10A 40A 8.0nC 0.88Ohm |
| Manufacturer | Central Semiconductor | Central Semiconductor | Central Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220FP-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 600 V | 650 V |
| Id Continuous Drain Current | 10 A | 11 A | 5 A |
| Rds On Drain Source Resistance | 880 mOhms | 300 mOhms | 1 Ohms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 10 V |
| Qg Gate Charge | 20 nC | 23.05 nC | 20 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 156 W | 25 W | 156 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Bulk | Bulk |
| Series | CDM | CDM | CDM22010 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | Central Semiconductor | Central Semiconductor | Central Semiconductor |
| Fall Time | 36 ns | 23 ns | 36 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 33 ns | 27 ns | 33 ns |
| Factory Pack Quantity | 750 | 50 | 400 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 57 ns | 37 ns | - |
| Typical Turn On Delay Time | 20 ns | 11 ns | - |
| Unit Weight | 0.211644 oz | 0.068784 oz | - |
| Tradename | - | UltraMOS | - |
| Part # Aliases | - | - | CDM22010-650 PBFREE |