CPC3703CTR vs CPC3703CT vs CPC3703CTR-CUT TAPE

 
PartNumberCPC3703CTRCPC3703CTCPC3703CTR-CUT TAPE
DescriptionMOSFET N Ch Dep Mode FET 250V
ManufacturerIXYSIXYS Integrated Circuits Division-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-89-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage250 V--
Id Continuous Drain Current360 mA--
Rds On Drain Source Resistance4 Ohms--
Vgs Gate Source Voltage15 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 125 C+ 125 C-
Pd Power Dissipation1.6 W--
ConfigurationSingleSingle-
Channel ModeDepletionDepletion-
TradenameClareClare-
PackagingReelDigi-ReelR Alternate Packaging-
ProductPCB Mount--
SeriesCPC3703CPC3703-
Transistor Type1 N-Channel1 N-Channel-
BrandIXYS Integrated Circuits--
Product TypeMOSFET--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Unit Weight0.004586 oz0.004603 oz-
Package Case-TO-243AA-
Operating Temperature--55°C ~ 125°C (TA)-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-89-3-
FET Type-MOSFET N-Channel, Metal Oxide-
Power Max-1.1W-
Drain to Source Voltage Vdss-250V-
Input Capacitance Ciss Vds-350pF @ 25V-
FET Feature-Depletion Mode-
Current Continuous Drain Id 25°C-360mA (Ta)-
Rds On Max Id Vgs-4 Ohm @ 200mA, 0V-
Vgs th Max Id---
Gate Charge Qg Vgs---
Pd Power Dissipation-1.6 W-
Vgs Gate Source Voltage-15 V-
Id Continuous Drain Current-360 mA-
Vds Drain Source Breakdown Voltage-250 V-
Rds On Drain Source Resistance-4 Ohms-
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