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| PartNumber | CSD13201W10 | CSD13202Q2 | CSD13202Q2/TI |
| Description | MOSFET N-CH NexFET Pwr MOSFET | MOSFET N-CH Power MOSFET 12V 9.3mohm | |
| Manufacturer | Texas Instruments | Texas Instruments | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | DSBGA-4 | WSON-6 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 12 V | 12 V | - |
| Id Continuous Drain Current | 1.6 A | 14.4 A | - |
| Rds On Drain Source Resistance | 34 mOhms | 9.3 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 650 mV | 580 mV | - |
| Vgs Gate Source Voltage | 4.5 V | 4.5 V | - |
| Qg Gate Charge | 2.3 nC | 5.1 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.2 W | 2.7 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | NexFET | NexFET | - |
| Packaging | Reel | Reel | - |
| Height | 0.62 mm | 0.75 mm | - |
| Length | 1 mm | 2 mm | - |
| Series | CSD13201W10 | CSD13202Q2 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 1 mm | 2 mm | - |
| Brand | Texas Instruments | Texas Instruments | - |
| Forward Transconductance Min | 23 S | 44 S | - |
| Fall Time | 9.7 ns | 13.6 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 5.9 ns | 28 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 14.4 ns | 11 ns | - |
| Typical Turn On Delay Time | 3.9 ns | 4.5 ns | - |
| Unit Weight | 0.000039 oz | 0.000208 oz | - |