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| PartNumber | CSD16301Q2 | CSD16321 | CSD16321C |
| Description | MOSFET N-Channel NexFET Power MOSFET | ||
| Manufacturer | Texas Instruments | Texas Instruments | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | WSON-6 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 25 V | - | - |
| Id Continuous Drain Current | 5 A | - | - |
| Rds On Drain Source Resistance | 24 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 900 mV | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 2 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 15 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | NexFET | NexFET | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 0.75 mm | - | - |
| Length | 2 mm | - | - |
| Series | CSD16301Q2 | NexFET | - |
| Transistor Type | 1 N-Channel Power MOSFET | 1 N-Channel | - |
| Width | 2 mm | - | - |
| Brand | Texas Instruments | - | - |
| Fall Time | 1.7 ns | 17 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 4.4 ns | 15 ns | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 4.1 ns | 27 ns | - |
| Typical Turn On Delay Time | 2.7 ns | 9 ns | - |
| Unit Weight | 0.000307 oz | - | - |
| Package Case | - | 8-PowerTDFN | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | 8-VSON (5x6) | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 3.1W | - |
| Drain to Source Voltage Vdss | - | 25V | - |
| Input Capacitance Ciss Vds | - | 3100pF @ 12.5V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 31A (Ta), 100A (Tc) | - |
| Rds On Max Id Vgs | - | 2.4 mOhm @ 25A, 8V | - |
| Vgs th Max Id | - | 1.4V @ 250μA | - |
| Gate Charge Qg Vgs | - | 19nC @ 4.5V | - |
| Pd Power Dissipation | - | 3.1 W | - |
| Vgs Gate Source Voltage | - | 10 V | - |
| Id Continuous Drain Current | - | 31 A | - |
| Vds Drain Source Breakdown Voltage | - | 25 V | - |
| Vgs th Gate Source Threshold Voltage | - | 1.1 V | - |
| Rds On Drain Source Resistance | - | 2.1 mOhms | - |
| Qg Gate Charge | - | 14 nC | - |