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| PartNumber | CSD17551Q3A | CSD17551Q5A | CSD17551 |
| Description | MOSFET 30V N-Chnl MOSFET | MOSFET N-Channel NexFET Power MOSFET | |
| Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | E | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | VSONP-8 | VSONP-8 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 48 A | 48 A | - |
| Rds On Drain Source Resistance | 9 mOhms | 11 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.1 V | 1.7 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Qg Gate Charge | 6 nC | 6 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 2.6 W | 3 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | - |
| Tradename | NexFET | NexFET | NexFET |
| Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
| Height | 0.9 mm | 1 mm | - |
| Length | 3.15 mm | 6 mm | - |
| Series | CSD17551Q3A | CSD17551Q5A | NexFET |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 3 mm | 4.9 mm | - |
| Brand | Texas Instruments | Texas Instruments | - |
| Forward Transconductance Min | 101 S | - | - |
| Fall Time | 3.4 ns | - | 3.4 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 24 ns | - | 24 ns |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 12 ns | - | 12 ns |
| Typical Turn On Delay Time | 8 ns | - | 8 ns |
| Unit Weight | 0.000974 oz | - | - |
| Package Case | - | - | 8-PowerVDFN |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | 8-SON (3.3x3.3) |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 2.6W |
| Drain to Source Voltage Vdss | - | - | 30V |
| Input Capacitance Ciss Vds | - | - | 1370pF @ 15V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 12A (Tc) |
| Rds On Max Id Vgs | - | - | 9 mOhm @ 11A, 10V |
| Vgs th Max Id | - | - | 2.1V @ 250μA |
| Gate Charge Qg Vgs | - | - | 7.8nC @ 4.5V |
| Pd Power Dissipation | - | - | 2.6 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 48 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Vgs th Gate Source Threshold Voltage | - | - | 1.6 V |
| Rds On Drain Source Resistance | - | - | 11.8 mOhms |
| Qg Gate Charge | - | - | 6 nC |
| Forward Transconductance Min | - | - | 101 S |