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| PartNumber | CSD19505KCS | CSD19505KTTT | CSD19505KTT |
| Description | MOSFET 80V N-CH NexFET Pwr MOSFET | MOSFET 80V, N ch NexFET MOSFETG , single D2PAK, 3.1mOhm 3-DDPAK/TO-263 -55 to 175 | MOSFET N-CH 80V 200A DDPAK-3 |
| Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | N | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | SMD/SMT | - |
| Package / Case | TO-220-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 80 V | 80 V | - |
| Id Continuous Drain Current | 100 A | 200 A | - |
| Rds On Drain Source Resistance | 3.1 mOhms | 3.1 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.6 V | 2.6 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 76 nC | 76 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 300 W | 300 W | - |
| Configuration | Single | Single | - |
| Tradename | NexFET | NexFET | - |
| Packaging | Tube | Reel | - |
| Height | 16.51 mm | 4.7 mm | - |
| Length | 10.67 mm | 9.25 mm | - |
| Series | CSD19505KCS | CSD19505KTT | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.7 mm | 10.26 | - |
| Brand | Texas Instruments | Texas Instruments | - |
| Forward Transconductance Min | 262 S | 262 S | - |
| Fall Time | 6 ns | 3 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 16 ns | 5 ns | - |
| Factory Pack Quantity | 50 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.211644 oz | - | - |
| Channel Mode | - | Enhancement | - |
| Moisture Sensitive | - | Yes | - |
| Typical Turn Off Delay Time | - | 22 ns | - |
| Typical Turn On Delay Time | - | 11 ns | - |