CSD19506KTT vs CSD19506KCS vs CSD19506KTTT

PartNumber	CSD19506KTT	CSD19506KCS	CSD19506KTTT
Description	MOSFET 80V, N ch NexFET MOSFETG , single D2PAK, 2.3mOhm 3-DDPAK/TO-263 -55 to 175	MOSFET 80V N-CH Power MOSFET	MOSFET 80V, N ch NexFET MOSFETG , single D2PAK, 2.3mOhm 3-DDPAK/TO-263 -55 to 175
Manufacturer	Texas Instruments	Texas Instruments	Texas Instruments
Product Category	MOSFET	MOSFET	MOSFET
RoHS	E	Y	N
Technology	Si	Si	Si
Mounting Style	SMD/SMT	Through Hole	SMD/SMT
Package / Case	TO-263-3	TO-220-3	TO-263-3
Number of Channels	1 Channel	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	80 V	80 V	80 V
Id Continuous Drain Current	150 A	200 A	200 A
Rds On Drain Source Resistance	2.3 mOhms	2.3 mOhms	2.3 mOhms
Vgs th Gate Source Threshold Voltage	2.5 V	2.5 V	2.5 V
Vgs Gate Source Voltage	20 V	20 V	20 V
Qg Gate Charge	120 nC	120 nC	120 nC
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 175 C	+ 175 C	+ 175 C
Pd Power Dissipation	375 W	375 W	375 W
Configuration	Single	Single	Single
Channel Mode	Enhancement	-	Enhancement
Tradename	NexFET	NexFET	NexFET
Packaging	Reel	Tube	Reel
Height	4.7 mm	16.51 mm	19.7 mm
Length	9.25 mm	10.67 mm	9.25 mm
Series	CSD19506KTT	CSD19506KCS	CSD19506KTT
Transistor Type	1 N-Channel	1 N-Channel	1 N-Channel
Width	10.26	4.7 mm	10.26 mm
Brand	Texas Instruments	Texas Instruments	Texas Instruments
Forward Transconductance Min	297 S	297 S	297 S
Fall Time	5 ns	10 ns	5 ns
Moisture Sensitive	Yes	-	Yes
Product Type	MOSFET	MOSFET	MOSFET
Rise Time	7 ns	11 ns	7 ns
Factory Pack Quantity	500	50	50
Subcategory	MOSFETs	MOSFETs	MOSFETs
Typical Turn Off Delay Time	30 ns	30 ns	30 ns
Typical Turn On Delay Time	14 ns	19 ns	14 ns
Unit Weight	-	0.211644 oz	-