PartNumber | CSD19531Q5A | CSD19531KCS | CSD19531 |
Description | MOSFET 100V 5.3mOhm Pwr MOSFET | MOSFET 100V 6.4mOhm Pwr MOSFET | |
Manufacturer | Texas Instruments | Texas Instruments | TI |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | E | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | Through Hole | Through Hole |
Package / Case | VSONP-8 | TO-220-3 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
Id Continuous Drain Current | 100 A | 200 A | - |
Rds On Drain Source Resistance | 6.4 mOhms | 7.7 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2.7 V | 2.7 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 37 nC | 38 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 175 C | + 175 C |
Pd Power Dissipation | 3.3 W | 179 W | - |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | NexFET | NexFET | NexFET |
Packaging | Reel | Tube | Tube |
Height | 1 mm | 16.51 mm | - |
Length | 6 mm | 10.67 mm | - |
Series | CSD19531Q5A | CSD19531KCS | CSD19531KCS |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 4.9 mm | 4.7 mm | - |
Brand | Texas Instruments | Texas Instruments | - |
Forward Transconductance Min | 82 S | - | - |
Fall Time | 5.2 ns | 4.1 ns | 4.1 ns |
Product Type | MOSFET | MOSFET | - |
Rise Time | 5.8 ns | 7.2 ns | 7.2 ns |
Factory Pack Quantity | 2500 | 50 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 18.4 ns | 16 ns | 16 ns |
Typical Turn On Delay Time | 6 ns | 8.4 ns | 8.4 ns |
Unit Weight | - | 0.211644 oz | 0.211644 oz |
Package Case | - | - | TO-220-3 |
Pd Power Dissipation | - | - | 179 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 105 A |
Vds Drain Source Breakdown Voltage | - | - | 100 V |
Vgs th Gate Source Threshold Voltage | - | - | 2.7 V |
Rds On Drain Source Resistance | - | - | 7.7 mOhms |
Qg Gate Charge | - | - | 38 nC |