CSD25401Q3 vs CSD25401 vs CSD25401Q3 /CSD25401

 
PartNumberCSD25401Q3CSD25401CSD25401Q3 /CSD25401
DescriptionMOSFET P-Ch NexFET Power MOSFETs
ManufacturerTexas InstrumentsTI-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseVSON-Clip-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current14 A--
Rds On Drain Source Resistance11.7 mOhms--
Vgs Gate Source Voltage12 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.8 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameNexFET--
PackagingReel--
Height1 mm--
Length3.3 mm--
SeriesCSD25401Q3--
Transistor Type1 P-Channel--
Width3.3 mm--
BrandTexas Instruments--
Fall Time12.6 ns--
Product TypeMOSFET--
Rise Time3.9 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time13.5 ns--
Typical Turn On Delay Time8.1 ns--
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