CSD85302L vs CSD85301Q2 vs CSD85301Q2T

PartNumber	CSD85302L	CSD85301Q2	CSD85301Q2T
Description	MOSFET 20V Dual N ch MOSFET	MOSFET CSD85301Q2 Dual N- Channel Power MOSFET	MOSFET Dual N-Channel NexFET Pwr MOSFET
Manufacturer	Texas Instruments	Texas Instruments	Texas Instruments
Product Category	MOSFET	MOSFET	MOSFET
RoHS	Y	Y	Y
Technology	Si	Si	Si
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	PICOSTAR-4	WSON-FET-6	WSON-FET-6
Number of Channels	2 Channel	2 Channel	2 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	20 V	20 V	20 V
Id Continuous Drain Current	7 A	8 A	5 A
Rds On Drain Source Resistance	24 mOhms	27 mOhms	27 mOhms
Vgs th Gate Source Threshold Voltage	680 mV	600 mV	600 mV
Vgs Gate Source Voltage	10 V	10 V	10 V
Qg Gate Charge	6 nC	5.4 nC, 5.4 nC	5.4 nC
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Pd Power Dissipation	1.7 W	2.3 W	2.3 W
Configuration	Dual	Dual	Dual
Channel Mode	Enhancement	Enhancement	-
Tradename	NexFET	NexFET	NexFET
Packaging	Reel	Reel	Reel
Height	0.22 mm	0.75 mm	0.75 mm
Length	1.35 mm	2 mm	2 mm
Series	CSD85302L	CSD85301Q2	CSD85301Q2
Transistor Type	2 N-Channel	2 N-Channel	2 N-Channel
Width	1.35 mm	2 mm	2 mm
Brand	Texas Instruments	Texas Instruments	Texas Instruments
Fall Time	99 ns	15 ns, 15 ns	15 ns
Product Type	MOSFET	MOSFET	MOSFET
Rise Time	54 ns	26 ns, 26 ns	26 ns
Factory Pack Quantity	3000	3000	250
Subcategory	MOSFETs	MOSFETs	MOSFETs
Typical Turn Off Delay Time	173 ns	14 ns, 14 ns	14 ns
Typical Turn On Delay Time	37 ns	6 ns, 6 ns	6 ns
Unit Weight	0.000042 oz	0.000342 oz	0.000342 oz
Forward Transconductance Min	-	20 S, 20 S	-