CSD87313DMS vs CSD87312Q3E vs CSD87313DMST

PartNumber	CSD87313DMS	CSD87312Q3E	CSD87313DMST
Description	MOSFET 30V, N ch NexFET MOSFETG , dual common drain SON3x3, 5.5mOhm 8-WSON -55 to 150	MOSFET Dual 30V N-CH NexFET Pwr MOSFETs	MOSFET 30V, N ch NexFET MOSFETG , dual common drain SON3x3, 5.5mOhm 8-WSON -55 to 150
Manufacturer	Texas Instruments	Texas Instruments	Texas Instruments
Product Category	MOSFET	MOSFET	MOSFET
RoHS	E	E	E
Technology	Si	Si	Si
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	WSON-8	VSON-8	WSON-8
Number of Channels	2 Channel	2 Channel	2 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	30 V	30 V	30 V
Id Continuous Drain Current	17 A	27 A	17 A
Rds On Drain Source Resistance	5.5 mOhms	33 mOhms	5.5 mOhms
Vgs th Gate Source Threshold Voltage	600 mV	800 mV	600 mV
Vgs Gate Source Voltage	10 V	8 V	10 V
Qg Gate Charge	28 nC, 28 nC	6.3 nC	28 nC, 28 nC
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Pd Power Dissipation	2.7 W	2.5 W	2.7 W
Configuration	Dual	Dual	Dual
Channel Mode	Enhancement	Enhancement	Enhancement
Tradename	NexFET	NexFET	NexFET
Packaging	Reel	Reel	Reel
Series	CSD87313DMS	CSD87312Q3E	CSD87313DMS
Transistor Type	2 N-Channel	2 N-Channel	2 N-Channel
Brand	Texas Instruments	Texas Instruments	Texas Instruments
Forward Transconductance Min	149 S, 149 S	39 S	149 S, 149 S
Fall Time	13 ns, 13 ns	2.9 ns	13 ns, 13 ns
Product Type	MOSFET	MOSFET	MOSFET
Rise Time	27 ns, 27 ns	16 ns	27 ns, 27 ns
Factory Pack Quantity	2500	2500	250
Subcategory	MOSFETs	MOSFETs	MOSFETs
Typical Turn Off Delay Time	41 ns, 41 ns	17 ns	41 ns, 41 ns
Typical Turn On Delay Time	9 ns, 9 ns	7.8 ns	9 ns, 9 ns
Height	-	1 mm	-
Length	-	3.3 mm	-
Width	-	3.3 mm	-
Unit Weight	-	0.001101 oz	-