PartNumber | CSD87350Q5D | CSD87350D | CSD87350 |
Description | MOSFET Synch Buck NexFET Power Block | ||
Manufacturer | Texas Instruments | - | Texas Instruments |
Product Category | MOSFET | - | FETs - Arrays |
RoHS | E | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | LSON-CLIP-8 | - | - |
Number of Channels | 2 Channel | - | 2 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 40 A | - | - |
Vgs th Gate Source Threshold Voltage | 1 V, 750 mV | - | - |
Vgs Gate Source Voltage | 5 V | - | - |
Qg Gate Charge | 8.4 nC, 20 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 12 W | - | - |
Configuration | Dual | - | Dual |
Channel Mode | Enhancement | - | - |
Tradename | NexFET | - | NexFET |
Packaging | Reel | - | Digi-ReelR Alternate Packaging |
Height | 1.5 mm | - | - |
Length | 6 mm | - | - |
Series | CSD87350Q5D | - | NexFET |
Transistor Type | 2 N-Channel | - | 2 N-Channel |
Type | Synchronous Buck MOSFET Driver | - | - |
Width | 5 mm | - | - |
Brand | Texas Instruments | - | - |
Forward Transconductance Min | 97 S, 157 S | - | - |
Development Kit | TPS53819AEVM-123 | - | - |
Fall Time | 2.3 ns, 4.7 ns | - | 2.3 ns |
Product Type | MOSFET | - | - |
Rise Time | 17 ns, 10 ns | - | 17 ns |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 13 ns, 33 ns | - | - |
Typical Turn On Delay Time | 7 ns, 8 ns | - | - |
Unit Weight | 0.005714 oz | - | - |
Package Case | - | - | 8-PowerLDFN |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | 8-LSON (5x6) |
FET Type | - | - | 2 N-Channel (Dual) |
Power Max | - | - | 12W |
Drain to Source Voltage Vdss | - | - | 30V |
Input Capacitance Ciss Vds | - | - | 1770pF @ 15V |
FET Feature | - | - | Logic Level Gate |
Current Continuous Drain Id 25°C | - | - | 40A |
Rds On Max Id Vgs | - | - | 5.9 mOhm @ 20A, 8V |
Vgs th Max Id | - | - | 2.1V @ 250μA |
Gate Charge Qg Vgs | - | - | 10.9nC @ 4.5V |
Pd Power Dissipation | - | - | 12 W |
Vgs Gate Source Voltage | - | - | 10 V |
Id Continuous Drain Current | - | - | 40 A 40 A |
Vds Drain Source Breakdown Voltage | - | - | 30 V 30 V |
Rds On Drain Source Resistance | - | - | 5 mOhms 1.2 mOhms |