CSD87350Q5D vs CSD87350D vs CSD87350

 
PartNumberCSD87350Q5DCSD87350DCSD87350
DescriptionMOSFET Synch Buck NexFET Power Block
ManufacturerTexas Instruments-Texas Instruments
Product CategoryMOSFET-FETs - Arrays
RoHSE--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseLSON-CLIP-8--
Number of Channels2 Channel-2 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current40 A--
Vgs th Gate Source Threshold Voltage1 V, 750 mV--
Vgs Gate Source Voltage5 V--
Qg Gate Charge8.4 nC, 20 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation12 W--
ConfigurationDual-Dual
Channel ModeEnhancement--
TradenameNexFET-NexFET
PackagingReel-Digi-ReelR Alternate Packaging
Height1.5 mm--
Length6 mm--
SeriesCSD87350Q5D-NexFET
Transistor Type2 N-Channel-2 N-Channel
TypeSynchronous Buck MOSFET Driver--
Width5 mm--
BrandTexas Instruments--
Forward Transconductance Min97 S, 157 S--
Development KitTPS53819AEVM-123--
Fall Time2.3 ns, 4.7 ns-2.3 ns
Product TypeMOSFET--
Rise Time17 ns, 10 ns-17 ns
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time13 ns, 33 ns--
Typical Turn On Delay Time7 ns, 8 ns--
Unit Weight0.005714 oz--
Package Case--8-PowerLDFN
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--8-LSON (5x6)
FET Type--2 N-Channel (Dual)
Power Max--12W
Drain to Source Voltage Vdss--30V
Input Capacitance Ciss Vds--1770pF @ 15V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--40A
Rds On Max Id Vgs--5.9 mOhm @ 20A, 8V
Vgs th Max Id--2.1V @ 250μA
Gate Charge Qg Vgs--10.9nC @ 4.5V
Pd Power Dissipation--12 W
Vgs Gate Source Voltage--10 V
Id Continuous Drain Current--40 A 40 A
Vds Drain Source Breakdown Voltage--30 V 30 V
Rds On Drain Source Resistance--5 mOhms 1.2 mOhms
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