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| PartNumber | CSD88537ND | CSD88537NDT | CSD88537NDR |
| Description | MOSFET 60-V Dual N-Channel Power MOSFET | MOSFET 60V Dual NCh NexFET Pwr MOSFET | |
| Manufacturer | Texas Instruments | Texas Instruments | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOIC-8 | SOIC-8 | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 16 A | 16 A | - |
| Rds On Drain Source Resistance | 15 mOhms | 15 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.6 V | 2.6 V | - |
| Vgs Gate Source Voltage | 20 V | 10 V | - |
| Qg Gate Charge | 14 nC | 14 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2.1 W | 2.1 W | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | NexFET | NexFET | - |
| Packaging | Reel | Reel | - |
| Height | 1.75 mm | 1.75 mm | - |
| Length | 4.9 mm | 4.9 mm | - |
| Series | CSD88537ND | CSD88537ND | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Width | 3.9 mm | 3.9 mm | - |
| Brand | Texas Instruments | Texas Instruments | - |
| Fall Time | 19 ns | 19 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 15 ns | 15 ns | - |
| Factory Pack Quantity | 2500 | 250 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 5 ns | 5 ns | - |
| Typical Turn On Delay Time | 6 ns | 6 ns | - |
| Unit Weight | 0.019048 oz | 0.019048 oz | - |
| Forward Transconductance Min | - | 42 S | - |
| Development Kit | - | DRV8308EVM, DRV8307EVM, BOOST-DRV8711 | - |