CXDM4060N TR vs CXDM4060N vs CXDM4060N TR PBFREE

 
PartNumberCXDM4060N TRCXDM4060NCXDM4060N TR PBFREE
DescriptionMOSFET 40Vds N-Ch Enh FET 20Vgs 6.0A 1.2W
ManufacturerCentral SemiconductorCentral Semiconductor-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-89--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current6 A--
Rds On Drain Source Resistance45 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge12 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.2 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
SeriesCXDMCXDM40-
Transistor Type1 N-Channel1 N-Channel-
BrandCentral Semiconductor--
Product TypeMOSFET--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Part # AliasesCXDM4060N PBFREE TR--
Unit Weight0.004603 oz0.004603 oz-
Package Case-SOT-89-3-
Pd Power Dissipation-1.2 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-6 A-
Vds Drain Source Breakdown Voltage-40 V-
Rds On Drain Source Resistance-45 mOhms-
Qg Gate Charge-12 nC-
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